NCE40P40D mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High density cell design for ultra low Rdson .
The NCE40P40D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
* VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
* High .
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